| Two-dimensional nanosheets produced by liquid exfoliation of layered materials JN Coleman, M Lotya, A O’Neill, SD Bergin, PJ King, U Khan, K Young, ... Science 331 (6017), 568-571, 2011 | 7536 | 2011 |
| Electrical characteristics of molybdenum disulfide flakes produced by liquid exfoliation K Lee, HY Kim, M Lotya, JN Coleman, GT Kim, GS Duesberg Advanced materials 36 (23), 4178-4182, 2011 | 314 | 2011 |
| Chemically modulated graphene diodes HY Kim, K Lee, N McEvoy, C Yim, GS Duesberg Nano letters 13 (5), 2182-2188, 2013 | 187 | 2013 |
| Transition metal dichalcogenide growth via close proximity precursor supply M O'Brien, N McEvoy, T Hallam, HY Kim, NC Berner, D Hanlon, K Lee, ... Scientific reports 4 (1), 7374, 2014 | 106 | 2014 |
| Highly sensitive, transparent, and flexible gas sensors based on gold nanoparticle decorated carbon nanotubes K Lee, V Scardaci, HY Kim, T Hallam, H Nolan, BE Bolf, GS Maltbie, ... Sensors and Actuators B: Chemical 188, 571-575, 2013 | 93 | 2013 |
| Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly RA Farrell, NT Kinahan, S Hansel, KO Stuen, N Petkov, MT Shaw, ... Nanoscale 4 (10), 3228-3236, 2012 | 68 | 2012 |
| Reliable processing of graphene using metal etchmasks S Kumar, N Peltekis, K Lee, HY Kim, GS Duesberg Nanoscale research letters 6, 1-4, 2011 | 51 | 2011 |
| CVD growth and processing of graphene for electronic applications S Kumar, N McEvoy, HY Kim, K Lee, N Peltekis, E Rezvani, H Nolan, ... physica status solidi (b) 248 (11), 2604-2608, 2011 | 45 | 2011 |
| Asymmetric bottom contacted device GS Duesberg, HY Kim US Patent 9,453,811, 2016 | 27 | 2016 |
| Investigation of the interfaces in schottky diodes using equivalent circuit models C Yim, N McEvoy, HY Kim, E Rezvani, GS Duesberg ACS applied materials & interfaces 5 (15), 6951-6958, 2013 | 27 | 2013 |
| Contact barriers in a single ZnO nanowire device K Kim, H Kang, H Kim, JS Lee, S Kim, W Kang, GT Kim Applied Physics A 94, 253-256, 2009 | 20 | 2009 |
| Electrical properties of high density arrays of silicon nanowire field effect transistors HY Kim, K Lee, JW Lee, S Kim, GT Kim, GS Duesberg Journal of Applied Physics 114 (14), 2013 | 10 | 2013 |
| Investigation of 2D transition metal dichalcogenide films for electronic devices GS Duesberg, T Hallam, M O'Brien, R Gatensby, HY Kim, K Lee, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 9 | 2015 |
| Investigation of carbon-silicon schottky diodes and their use as chemical sensors GS Duesberg, HY Kim, K Lee, N McEvoy, S Winters, C Yim 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 8 | 2013 |
| Electrical Properties of a Single ZnO Nanowire in a four-probe Configuration K Kim, H Kang, C Yim, D Jeon, H Kim, GT Kim, JS Lee, W Kang Journal of the Korean Institute of Electrical and Electronic Material …, 2005 | 1 | 2005 |
| Electronic device, memory device, and method of fabricating the same GT Kim, KH Lee, HY Kim, KJ Lee, W Kang US Patent 8,426,935, 2013 | | 2013 |
| Fabrication of oxidation-free contacts to nanopatterned Permalloy structures HY Kim, KH Lee, GT Kim, W Kang, KJ Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | | 2009 |
| Electrical properties and contact energy barrier of ZnO nanowire field effect transistor KH Kim, CY Yim, HY Kim, GT Kim, HY Kang, JS Lee, W Kang Proceedings of the Korean Institute of Electrical and Electronic Material …, 2005 | | 2005 |
| Fabrication of nanostructures using electron beam lithography and the morphology change of nanowire via etching processes DY Jeon, HY Kim, SJ Park, JH Huh, HD Lee, CY Yim, KH Kim, GT Kim Proceedings of the Korean Institute of Electrical and Electronic Material …, 2005 | | 2005 |
Kangho LeeUniversität der Bundeswehr MünchenVerified email at unibw.de
