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Jason Roussos
Jason Roussos
Adresă de e-mail confirmată pe nrl.navy.mil
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Trapping effects and microwave power performance in AlGaN/GaN HEMTs
SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ...
IEEE Transactions on Electron Devices 48 (3), 465-471, 2001
8302001
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/plasma treatment prior to SiN passivation
AP Edwards, JA Mittereder, SC Binari, DS Katzer, DF Storm, JA Roussos
IEEE electron device letters 26 (4), 225-227, 2005
1722005
Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress
JA Mittereder, SC Binari, PB Klein, JA Roussos, DS Katzer, DF Storm, ...
Applied Physics Letters 83 (8), 1650-1652, 2003
1172003
Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates
KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ...
IEEE electron device letters 31 (2), 99-101, 2009
972009
/InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
882014
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
682013
Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
DF Storm, DS Katzer, SC Binari, ER Glaser, BV Shanabrook, JA Roussos
Applied physics letters 81 (20), 3819-3821, 2002
562002
Ion induced charge collection in GaAs MESFETs
A Campbell, A Knudson, D McMorrow, W Anderson, J Roussos, S Espy, ...
IEEE Transactions on Nuclear Science 36 (6), 2292-2299, 1989
551989
X-band power and linearity performance of compositionally graded AlGaN channel transistors
SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ...
IEEE Electron Device Letters 39 (12), 1884-1887, 2018
432018
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
432014
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 301, 429-433, 2007
422007
MBE growth of AlGaN/GaN HEMTs with high power density
DS Katzer, SC Binari, DF Storm, JA Roussos, BV Shanabrook, ER Glaser
Electronics Letters 38 (25), 1, 2002
382002
Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
DS Katzer, DF Storm, SC Binari, JA Roussos, BV Shanabrook, ER Glaser
Journal of crystal growth 251 (1-4), 481-486, 2003
362003
AlN/GaN insulated gate HEMTs with HfO2 gate dielectric
DA Deen, SC Binari, DF Storm, DS Katzer, JA Roussos, JC Hackley, ...
Electronics letters 45 (8), 423-424, 2009
292009
Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates
DF Storm, JA Roussos, DS Katzer, JA Mittereder, R Bass, SC Binari, ...
Electronics Letters 42 (11), 663-665, 2006
282006
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...
Applied Physics Letters 116 (11), 2020
262020
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
DF Storm, DS Katzer, DA Deen, R Bass, DJ Meyer, JA Roussos, SC Binari, ...
Solid-state electronics 54 (11), 1470-1473, 2010
242010
Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 305 (2), 340-345, 2007
242007
Epitaxial single-crystal ScAlN on 4H-SiC for high-velocity, low-loss SAW devices
VJ Gokhale, BP Downey, MT Hardy, EN Jin, JA Roussos, DJ Meyer
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020
202020
Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy
PB Klein, JA Mittereder, SC Binari, JA Roussos, DS Katzer, DF Storm
Electronics Letters 39 (18), 1, 2003
192003
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