Mattias Dahlström
Mattias Dahlström
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Submicron scaling of HBTs
MJW Rodwell, M Urteaga, T Mathew, D Scott, D Mensa, Q Lee, J Guthrie, ...
IEEE Transactions on Electron Devices 48 (11), 2606-2624, 2001
G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers
VK Paidi, Z Griffith, Y Wei, M Dahlstrom, M Urteaga, N Parthasarathy, ...
IEEE Transactions on Microwave Theory and Techniques 53 (2), 598-605, 2005
InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub/spl tau//and 505-GHz f/sub max
Z Griffith, M Dahlstrom, MJW Rodwell, XM Fang, D Lubyshev, Y Wu, ...
IEEE Electron Device Letters 26 (1), 11-13, 2004
Thermal limitations of InP HBTs in 80-and 160-gb ICs
I Harrison, M Dahlstrom, S Krishnan, Z Griffith, YM Kim, MJW Rodwell
IEEE Transactions on Electron Devices 51 (4), 529-534, 2004
Wideband DHBTs using a graded carbon-doped InGaAs base
M Dahlstrom, XM Fang, D Lubyshev, M Urteaga, S Krishnan, ...
IEEE Electron Device Letters 24 (7), 433-435, 2003
High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates
YM Kim, M Dahlstrom, S Lee, AJW Rodwell, AC Gossard
IEEE Electron Device Letters 23 (6), 297-299, 2002
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
BA Orner, M Dahlstrom, A Pothiawala, RM Rassel, Q Liu, H Ding, ...
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax= 425 GHz
S Lee, HJ Kim, M Urteaga, S Krishnan, Y Wei, M Dahlstrom, M Rodwell
ELECTRONICS LETTERS-IEE 37 (17), 1096-1097, 2001
InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmaxand low C/sub cb//I/sub c/ ratio
Z Griffith, M Dahlstrom, M Urteaga, MJW Rodwell, XM Fang, D Lubyshev, ...
IEEE Electron Device Letters 25 (5), 250-252, 2004
Device isolation with improved thermal conductivity
ME Dahlstrom, D Dang, Q Liu, RM Malladi
US Patent 8,912,574, 2014
Bipolar transistor with dual shallow trench isolation and low base resistance
MH Khater, AD Stricker, BA Orner, ME Dahlstrom
US Patent 7,888,745, 2011
Transistor and circuit design for 100-200-GHz ICs
Z Griffith, Y Dong, D Scott, Y Wei, N Parthasarathy, M Dahlstrom, C Kadow, ...
IEEE Journal of Solid-State Circuits 40 (10), 2061-2069, 2005
Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
RM Rassel, JB Johnson, BA Orner, SK Reynolds, ME Dahlstrom, ...
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
An 8-GHz continuous-time/spl Sigma/-/spl Delta/analog-digital converter in an InP-based HBT technology
S Krishnan, D Scott, Z Griffith, M Urteaga, Y Wei, N Parthasarathy, ...
IEEE transactions on microwave theory and techniques 51 (12), 2555-2561, 2003
87 GHz static frequency divider in an InP-based mesa DHBT technology
S Krishnan, Z Griffith, M Urteaga, Y Wei, D Scott
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002
G-band (140-220-GHz) InP-based HBT amplifiers
M Urteaga, D Scott, S Krishnan, Y Wei, M Dahlstrom, Z Griffith, ...
IEEE Journal of Solid-State Circuits 38 (9), 1451-1456, 2003
n/sup+/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs
C Kadow, M Dahlstrom, JU Bae, HK Lin, AC Gossard, MJW Rodwell, ...
IEEE transactions on electron devices 52 (2), 151-158, 2005
InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and f/sub/spl tau//, f/sub max/> 268 GHz
Z Griffith, YM Kim, M Dahlstrom, AC Gossard, MJW Rodwell
IEEE electron device letters 25 (10), 675-677, 2004
Deep submicron InP DHBT technology with electroplated emitter and base contacts
M Urteaga, P Rowell, R Pierson, B Brar, M Dahlstrom, Z Griffith, ...
Conference Digest [Includes' Late News Papers' volume] Device Research …, 2004
InGaAs/InP DHBT’s with> 370 GHz ft and fmax using a Graded Carbon-Doped Base
M Dahlström, Z Griffith, M Urteaga, MJW Rodwell, XM Fang, D Lubyshev, ...
Post-deadline proceedings of Device Research Conference 2003, 2003
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