GaN/NbN epitaxial semiconductor/superconductor heterostructures R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
157 2018 Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
144 2017 BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
88 2014 Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...
Nature communications 11 (1), 2314, 2020
85 2020 High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
68 2013 Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
61 2020 Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
56 2016 Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
52 2020 Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
49 2015 Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
45 2017 Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
45 2016 Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
43 2014 Compositionally graded III-N HEMTs for improved linearity: A simulation study MG Ancona, JP Calame, DJ Meyer, S Rajan, BP Downey
IEEE Transactions on Electron Devices 66 (5), 2151-2157, 2019
38 2019 Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films MJ Tadjer, VD Wheeler, BP Downey, ZR Robinson, DJ Meyer, CR Eddy Jr, ...
Solid-State Electronics 136, 30-35, 2017
33 2017 Molecular beam epitaxy of transition metal nitrides for superconducting device applications DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ...
physica status solidi (a) 217 (3), 1900675, 2020
27 2020 Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...
Applied Physics Letters 116 (11), 2020
26 2020 Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0. 17Al0. 83N/AlN/GaN MIS–HEMTs BP Downey, DJ Meyer, DS Katzer, TM Marron, M Pan, X Gao
Solid-State Electronics 106, 12-17, 2015
25 2015 Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates N Nepal, DS Katzer, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 9 (2), 021003, 2016
23 2016 Current-induced degradation of nickel ohmic contacts to SiC BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney
Journal of electronic materials 38, 563-568, 2009
23 2009 Demonstration of GaN HyperFETs with ALD VO2 A Verma, B Song, D Meyer, B Downey, V Wheeler, HG Xing, D Jena
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
22 2016 
David J. MeyerNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
