Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores
IEEE Electron Device Letters 25 (8), 571-573, 2004
347 2004 Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès
IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005
263 2005 Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs H Abd El Hamid, B Iñíguez, JR Guitart
IEEE transactions on electron devices 54 (3), 572-579, 2007
182 2007 Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs H Abd El Hamid, JR Guitart, B Iñíguez
IEEE Transactions on Electron Devices 54 (6), 1402-1408, 2007
137 2007 An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric P Moens, C Liu, A Banerjee, P Vanmeerbeek, P Coppens, H Ziad, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
126 2014 Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez
IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007
106 2007 Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters I Castro, J Roig, R Gelagaev, B Vlachakis, F Bauwens, DG Lamar, ...
IEEE Transactions on Power Electronics 31 (3), 2485-2495, 2015
87 2015 Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
84 2017 A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs H Abd El Hamid, JR Guitart, V Kilchytska, D Flandre, B Iñiguez
IEEE transactions on electron devices 54 (9), 2487-2496, 2007
77 2007 Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs O Moldovan, B Iniguez, D Jiménez, J Roig
IEEE transactions on electron devices 54 (1), 162-165, 2006
62 2006 Origin of Anomalous Hysteresis in Resonant Converters With Superjunction FETs J Roig, F Bauwens
IEEE Transactions on Electron Devices 62 (9), 3092-3094, 2015
61 2015 P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
60 2017 Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET H Abd-Elhamid, B Iniguez, D Jiménez, J Roig, J Pallarès, LF Marsal
Solid-state electronics 50 (5), 805-812, 2006
43 2006 Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
42 2005 Measurements for Superjunction MOSFETs: Limitations and OpportunitiesGD Zulauf, J Roig-Guitart, JD Plummer, JM Rivas-Davila
IEEE Transactions on Electron Devices 66 (1), 578-584, 2018
39 2018 A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-State Electronics 50 (2), 155-163, 2006
38 2006 Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
38 2002 Stress-induced mobility enhancement for integrated power transistors P Moens, J Roig, F Clemente, I De Wolf, B Desoete, F Bauwens, M Tack
2007 IEEE International Electron Devices Meeting, 877-880, 2007
27 2007 Reduction of self-heating effect on SOIM devices J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
27 2002 An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs J Zhuang, G Zulauf, J Roig, JD Plummer, J Rivas-Davila
2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL), 1-7, 2019
26 2019