Florin Draghici
Florin Draghici
Associate Professor, UPB
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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior
G Brezeanu, G Pristavu, F Draghici, M Badila, R Pascu
Journal of Applied Physics 122 (8), 2017
4H-SiC Schottky diodes for temperature sensing applications in harsh environments
G Brezeanu, F Draghici, F Craciunioiu, C Boianceanu, F Udrea, F Udrea, ...
Materials Science Forum 679, 575-578, 2011
Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing
G Pristavu, G Brezeanu, R Pascu, F Drăghici, M Bădilă
Materials Science in Semiconductor Processing 94, 64-69, 2019
400° C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
F Draghici, G Brezeanu, G Pristavu, R Pascu, M Badila, A Pribeanu, ...
Sensors 19 (10), 2384, 2019
On the improvement by laser ignition of the performances of a passenger car gasoline engine
N Pavel, R Chiriac, A Birtas, F Draghici, M Dinca
Optics Express 27 (8), A385-A396, 2019
High temperature sensors based on silicon carbide (SiC) devices
G Brezeanu, M Badila, F Draghici, R Pascu, G Pristavu, F Craciunoiu, ...
2015 International Semiconductor Conference (CAS), 3-10, 2015
60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
R Pascu, G Pristavu, G Brezeanu, F Draghici, P Godignon, C Romanitan, ...
Sensors 21 (3), 942, 2021
Two packaging solutions for high temperature SiC diode sensors
G Brezeanu, F Draghici, M Badila, F Craciunoiu, G Pristavu, R Pascu, ...
Materials Science Forum 778, 1063-1066, 2014
High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination
R Pascu, F Draghici, M Badila, F Craciunoiu, G Brezeanu, A Dinescu, ...
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 379-382, 2011
An industrial temperature probe based on SiC diodes
F Draghici, M Badila, G Brezeanu, I Rusu, F Craciunoiu, I Enache
CAS 2010 Proceedings (International Semiconductor Conference) 2, 409-412, 2010
A system to measure reverse recovery time and stored charge at ultrafast power diodes
F Draghici, X Jorda, G Brezeanu, M Badila, J Millan, P Godignon
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No …, 2001
Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing
G Pristavu, G Brezeanu, M Badila, F Draghici, R Pascu, F Craciunoiu, ...
Materials Science Forum 897, 606-609, 2017
Temperature behavior of 4H-SiC MOS capacitor used as a gas sensor
R Pascu, G Pristavu, M Badila, G Brezeanu, F Draghici, F Craciunoiu
2014 International Semiconductor Conference (CAS), 185-188, 2014
Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges
G Brezeanu, G Pristavu, F Draghici, R Pascu, F Della Corte, S Rascuna
IEEE Journal of the Electron Devices Society 8, 1339-1344, 2020
The effect of the post-metallization annealing of Ni/n-type 4H-SiC Schottky contact
R Pascu, F Craciunoiu, M Kusko, F Draghici, A Dinescu, M Danila
CAS 2012 (International Semiconductor Conference) 2, 457-460, 2012
On the possibility to improve petrol engine operation by laser ignition
A Birtas, N Boicea, G Croitoru, M Dinca, N Pavel, F Draghici, R Chiriac
Energy Procedia 157, 1022-1028, 2019
4H-SiC Schottky contact improvement for temperature sensor applications
F Draghici, M Badila, G Brezeanu, G Pristavu, I Rusu, F Craciunoiu, ...
CAS 2013 (International Semiconductor Conference) 2, 163-166, 2013
High temperature characterization system for silicon carbide devices
L Teodorescu, F Drăghici, G Brezeanu, I Rusu
CAS 2012 (International Semiconductor Conference) 2, 449-452, 2012
Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor
R Pascu, G Pristavu, G Brezeanu, F Draghici, M Badila, I Rusu, ...
Materials Science Forum 821, 436-439, 2015
A Fully Electrically Isolated Package for High Temperature SiC Sensors
G Brezeanu, F Draghici, M Badila, I Rusu, F Bernea, P Godignon
Materials Science Forum 717, 925-928, 2012
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