Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior G Brezeanu, G Pristavu, F Draghici, M Badila, R Pascu Journal of Applied Physics 122 (8), 2017 | 40 | 2017 |
4H-SiC Schottky diodes for temperature sensing applications in harsh environments G Brezeanu, F Draghici, F Craciunioiu, C Boianceanu, F Udrea, F Udrea, ... Materials Science Forum 679, 575-578, 2011 | 35 | 2011 |
Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing G Pristavu, G Brezeanu, R Pascu, F Drăghici, M Bădilă Materials Science in Semiconductor Processing 94, 64-69, 2019 | 31 | 2019 |
400° C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments F Draghici, G Brezeanu, G Pristavu, R Pascu, M Badila, A Pribeanu, ... Sensors 19 (10), 2384, 2019 | 20 | 2019 |
On the improvement by laser ignition of the performances of a passenger car gasoline engine N Pavel, R Chiriac, A Birtas, F Draghici, M Dinca Optics Express 27 (8), A385-A396, 2019 | 19 | 2019 |
High temperature sensors based on silicon carbide (SiC) devices G Brezeanu, M Badila, F Draghici, R Pascu, G Pristavu, F Craciunoiu, ... 2015 International Semiconductor Conference (CAS), 3-10, 2015 | 18 | 2015 |
60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes R Pascu, G Pristavu, G Brezeanu, F Draghici, P Godignon, C Romanitan, ... Sensors 21 (3), 942, 2021 | 13 | 2021 |
Two packaging solutions for high temperature SiC diode sensors G Brezeanu, F Draghici, M Badila, F Craciunoiu, G Pristavu, R Pascu, ... Materials Science Forum 778, 1063-1066, 2014 | 13 | 2014 |
High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination R Pascu, F Draghici, M Badila, F Craciunoiu, G Brezeanu, A Dinescu, ... CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 379-382, 2011 | 11 | 2011 |
An industrial temperature probe based on SiC diodes F Draghici, M Badila, G Brezeanu, I Rusu, F Craciunoiu, I Enache CAS 2010 Proceedings (International Semiconductor Conference) 2, 409-412, 2010 | 11 | 2010 |
A system to measure reverse recovery time and stored charge at ultrafast power diodes F Draghici, X Jorda, G Brezeanu, M Badila, J Millan, P Godignon 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No …, 2001 | 11 | 2001 |
Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing G Pristavu, G Brezeanu, M Badila, F Draghici, R Pascu, F Craciunoiu, ... Materials Science Forum 897, 606-609, 2017 | 10 | 2017 |
Temperature behavior of 4H-SiC MOS capacitor used as a gas sensor R Pascu, G Pristavu, M Badila, G Brezeanu, F Draghici, F Craciunoiu 2014 International Semiconductor Conference (CAS), 185-188, 2014 | 10 | 2014 |
Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges G Brezeanu, G Pristavu, F Draghici, R Pascu, F Della Corte, S Rascuna IEEE Journal of the Electron Devices Society 8, 1339-1344, 2020 | 9 | 2020 |
The effect of the post-metallization annealing of Ni/n-type 4H-SiC Schottky contact R Pascu, F Craciunoiu, M Kusko, F Draghici, A Dinescu, M Danila CAS 2012 (International Semiconductor Conference) 2, 457-460, 2012 | 9 | 2012 |
On the possibility to improve petrol engine operation by laser ignition A Birtas, N Boicea, G Croitoru, M Dinca, N Pavel, F Draghici, R Chiriac Energy Procedia 157, 1022-1028, 2019 | 6 | 2019 |
4H-SiC Schottky contact improvement for temperature sensor applications F Draghici, M Badila, G Brezeanu, G Pristavu, I Rusu, F Craciunoiu, ... CAS 2013 (International Semiconductor Conference) 2, 163-166, 2013 | 6 | 2013 |
High temperature characterization system for silicon carbide devices L Teodorescu, F Drăghici, G Brezeanu, I Rusu CAS 2012 (International Semiconductor Conference) 2, 449-452, 2012 | 6 | 2012 |
Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor R Pascu, G Pristavu, G Brezeanu, F Draghici, M Badila, I Rusu, ... Materials Science Forum 821, 436-439, 2015 | 5 | 2015 |
A Fully Electrically Isolated Package for High Temperature SiC Sensors G Brezeanu, F Draghici, M Badila, I Rusu, F Bernea, P Godignon Materials Science Forum 717, 925-928, 2012 | 5 | 2012 |