| Initial stages of InAs epitaxy on vicinal GaAs (001)-(2× 4) V Bressler-Hill, A Lorke, S Varma, PM Petroff, K Pond, WH Weinberg Physical Review B 50 (12), 8479, 1994 | 184 | 1994 |
| Island scaling in strained heteroepitaxy: InAs/GaAs (001) V Bressler-Hill, S Varma, A Lorke, BZ Nosho, PM Petroff, WH Weinberg Physical review letters 74 (16), 3209, 1995 | 161 | 1995 |
| Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs (001) SP DenBaars, CM Reaves, V Bressler-Hill, S Varma, WH Weinberg, ... Journal of crystal growth 145 (1-4), 721-727, 1994 | 111 | 1994 |
| Atom‐resolved imaging and spectroscopy on the GaAs (001) surface using tunneling microscopy V Bressler‐Hill, M Wassermeier, K Pond, R Maboudian, GAD Briggs, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 110 | 1992 |
| Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs (001)-(2× 4) surface M Wassermeier, V Bressler-Hill, R Maboudian, K Pond, XS Wang, ... Surface science 278 (1-2), L147-L151, 1992 | 50 | 1992 |
| Tunneling spectroscopy on the GaAs (110) surface: Effect of dopant concentration R Maboudian, K Pond, V Bressler-Hill, M Wassermeier, PM Petroff, ... Surface science 275 (1-2), L662-L668, 1992 | 45 | 1992 |
| Characterization of MOCVD-grown InP on InGaPGaAs (001) CM Reaves, V Bressler-Hill, S Varma, WH Weinberg, SP DenBaars Surface science 326 (3), 209-217, 1995 | 42 | 1995 |
| Step bunching and step equalization on vicinal GaAs (001) surfaces K Pond, A Lorke, J Ibbetson, V Bressler‐Hill, R Maboudian, WH Weinberg, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 31 | 1994 |
| InP islands on InGaP/GaAs (001): island separation distributions S Varma, CM Reaves, V Bressler-Hill, SP DenBaars, WH Weinberg Surface science 393 (1-3), 24-33, 1997 | 25 | 1997 |
| Comment on ‘‘Structure and composition of GaAs (001) surfaces’’ R Maboudian, V Bressler-Hill, WH Weinberg Physical Review Letters 70 (20), 3172, 1993 | 25 | 1993 |
| Performance of an ultrahigh‐vacuum sample transfer system for investigation of molecular‐beam epitaxy grown semiconductor surfaces XS Wang, C Huang, V Bressler‐Hill, R Maboudian, WH Weinberg Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (5 …, 1993 | 19 | 1993 |
| Scanning tunneling microscopy of flat and vicinal molecular‐beam epitaxy grown GaAs (001)‐(2× 4) surfaces: The effect of growth rate K Pond, R Maboudian, V Bressler‐Hill, D Leonard, XS Wang, K Self, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 19 | 1993 |
| Initial stages of Ge/GaAs (100) interface formation XS Wang, K Self, V Bressler-Hill, R Maboudian, WH Weinberg Physical Review B 49 (7), 4775, 1994 | 18 | 1994 |
| Surface morphology of MBE-grown GaAs (001)−(2× 4) and GaAs (001)-faceted surfaces investigated by scanning tunneling microscopy V Bressler-Hill, R Maboudian, M Wassermeier, XS Wang, K Pond, ... Surface science 287, 514-519, 1993 | 18 | 1993 |
| Analysis of GaAs(100) surfaces prepared with various wet and in situ sample treatments XS Wang, KW Self, R Maboudian, C Huang, V Bressler‐Hill, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993 | 17 | 1993 |
| Effect of growth rate on the surface morphology of MBE-grown GaAs (001)-(2× 4) R Maboudian, V Bressler-Hill, K Pond, XS Wang, PM Petroff, ... Surface science 302 (1-2), L269-L274, 1994 | 15 | 1994 |
| Effects of strain on island scaling studied by Monte Carlo simulations BZ Nosho, V Bressler-Hill, S Varma, WH Weinberg Surface science 364 (2), 164-177, 1996 | 10 | 1996 |
| Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs (100) surfaces CM Reaves, V Bressler-Hill, WH Weinberg, SP Denbaars Journal of electronic materials 24, 1605-1609, 1995 | 8 | 1995 |
| Characterization of InP islands on InGaPGaAs (001): effect of deposition temperature V Bressler-Hill, CM Reaves, S Varma, SP DenBaars, WH Weinberg Surface science 341 (1-2), 29-39, 1995 | 6 | 1995 |
| Scanning tunneling microscopy studies of Ge/GaAs (100) interface formation XS Wang, K Self, D Leonard, V Bressler‐Hill, R Maboudian, PM Petroff, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 6 | 1993 |
